型号:

IXGQ20N120BD1

RoHS:无铅 / 符合
制造商:IXYS描述:IGBT 1200V FRD TO-3P
详细参数
数值
产品分类 分离式半导体产品 >> IGBT - 单路
IXGQ20N120BD1 PDF
标准包装 30
系列 -
IGBT 类型 -
电压 - 集电极发射极击穿(最大) 1200V
Vge, Ic时的最大Vce(开) 3.4V @ 15V,20A
电流 - 集电极 (Ic)(最大) 40A
功率 - 最大 190W
输入类型 标准
安装类型 通孔
封装/外壳 TO-3P-3,SC-65-3
供应商设备封装 TO-3P
包装 管件
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